ACE7402A Description
The ACE7402A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and...
ACE7402A Key Features
- 20V/4.0A, RDS(ON)=65mΩ@VGS=4.5V
- 20V/3.4A,RDS(ON)=80mΩ@VGS=2.5V
- 20V/2.8A, RDS(ON) =95mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter
- Load Switch