ACE7407A Description
The ACE7407A is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching, and...
ACE7407A Key Features
- 20V/-3.4A, RDS (ON)= 100mΩ@VGS=-4.5V
- 20V/-2.4A, RDS (ON)= 125mΩ@VGS=-2.5V
- 20V/-1.7A, RDS (ON)= 150mΩ@VGS=-1.8V
- 20V/-1.0A, RDS (ON)= 220mΩ@VGS=-1.25V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- DC/DC Converter