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ADT2C60W Datasheet Preview

ADT2C60W Datasheet

3 Quadrants Triacs

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ADV 
                                                                            ADT2C60W/80W
3Quadrants Triacs
General Description
This device is suitable for low power AC switching application,
phase control application such as fan speed and temperature
modulation control , lighting control and static switching relay
also designed for use in MPU interface, TTLlogic.
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 2 A )
High Commutation dv/dt500V/uS
These Devices are Pb-Free and are RoHS Compliant
2.T2
3.Gate
1.T1
1
2
3
2
SOT-223
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 75 °C
Conditions
ADT2C60W
ADT2C80W
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
2
16/17
1.28
50
1
0.2
1
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
1/6
www.advsemi.com
ADV
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Feb,2013 -Rev.3.02




ADV

ADT2C60W Datasheet Preview

ADT2C60W Datasheet

3 Quadrants Triacs

No Preview Available !

 
ADV 
                                                                            ADT2C60W/80W
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 125°C
ITM = 2A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 125°C
Q1-Q2-Q3
Q1-Q2-Q3
Gate Trigger Voltage
Gate Trigger Current
VD = 12V RL = 33
Q1-Q2-Q3
Holding Current
IT = 0.1A
Q1-Q3
Q2
Latching Current
IG = 1.2 IGT
Critical Rate of Rise of Off-State
Voltage
VD = 2/3VDRM gate open
Tj = 125°C
Rate of Change of Commutating
(dI/dt)c=-0.5A/ms
Current,
Tj = 125°C
Junction to case (AC)
Junction to ambient(Copper surface under tab:S=5cm2)
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
ADT2C60W/80W
10
0.5
1.6
0.2
1.5
10
10
15
25
500
10
25
60
Unit
uA
mA
V
V
V
mA
mA
mA
V/μs
V/μs
°C/W
°C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
2/6
www.advsemi.com
Feb,2013 -Rev.3.02


Part Number ADT2C60W
Description 3 Quadrants Triacs
Maker ADV
Total Page 6 Pages
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