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AIS6D60 Datasheet Preview

AIS6D60 Datasheet

4 Quadrants Triacs

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                                                                        AIS6D60/80
4 Quadrants Triacs
General Description
High current density due to mesa technology . the AIS6D triac
series is suitable for general purpose AC switching. They can be
used as an ON/OFF function in applications such as static relays,
heating regulation, High power motor controls e.g. washing
machines and vacuum cleaners,Rectifier-fed DC inductive loads
e.g.DC motors and solenoids , motor speed controllers.
2.T2
3.Gate
1.T1
Features
Repetitive Peak Off-State Voltage: 600Vand800V
R.M.S On-State Current ( IT(RMS)= 6A )
High Commutation dv/dt
These Devices are Pb-Free and are RoHS Compliant
Isolated heatsink mounted , Isolation Voltage ( VISO = 2500V AC )
123
TO-220 Isolated
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 105°C
Conditions
AIS6D60
AIS6D80
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 125°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 125°C
Average Gate Power Dissipation(Tj=125°C)
Peak Gate Power Dissipation(tp=20us,Tj=125°C)
Operating Junction Temperature
Storage Temperature
Ratings
600
800
6
60/63
20
50
4
1
5
- 40 ~ 125
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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March,2013 -Rev.3.02




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AIS6D60 Datasheet Preview

AIS6D60 Datasheet

4 Quadrants Triacs

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                                                                        AIS6D60/80
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
AIS6D60/80
Unit
IDRM Peak Forward Reverse Blocking
IRRM
Current
VTM Peak On-State Voltage
VDRM = VRRM, TJ = 25°C
VDRM = VRRM, TJ = 125°C
ITM = 8.5A, tp = 380 μs
Max.
Max.
T
S Blank
5
1
1.55
B
uA
mA
V
VGD
Q1-Q2-Q3-Q4
Non Trigger Gate
Voltage
VD = VDRM RL = 3.3 k
TJ = 125°C
Min.
0.2
V
VGT Q1-Q2-Q3-Q4 GateTrigger Voltage
Max.
1.3
V
IGT
Q1-Q2-Q3
GateTrigger Current
VD = 12V RL = 33
Max.
5
10 35 50
mA
Q4 10 25 70 100
IH Q1-Q2-Q3-Q4 Holding Current
IT = 0.1A
Max. 10 25 35 60 mA
Q1-Q3-Q4
IL Latching Current
Q2
IG = 1.2 IGT
15 30 40 60
Max.
mA
20 40 60 90
dV/dt
Critical Rate of Rise of Off-State VD = 2/3VDRM gate open
Voltage
Tj = 125°C
Min.
10
20 200 400 V/μs
(dV/dt)c
Rth(j-c)
Rth(j-a)
Rate of Change of Commutating
Current,
Junction to case (AC)
Junction to ambient
(dI/dt)c=-2.7A/ms
Tj = 125°C
Min.
Max.
Max.
1
25
2.7
60
10 V/μs
°C/W
°C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
RL
VD VD
A
V
RG
Q3(T2-G-)
T2-
A
V
RG
Q4(T2-G+)
 
2/6
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March,2013 -Rev.3.02


Part Number AIS6D60
Description 4 Quadrants Triacs
Maker ADV
Total Page 6 Pages
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