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AIT16CH60 Datasheet Preview

AIT16CH60 Datasheet

3 Quadrants High temperature Triacs

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                                                                                  AIT16CH60/80
3 Quadrants High temperature Triacs
General Description
High current density due to mesa technology , guaranteed maximum
junction temperature 150° C. The AIT16CH triac series is suitable for
general purpose AC switching. They can beused as an ON/OFF function
in applications such as static relays, heating regulation, High power motor
controls e.g. washing machines and vacuum cleaners,Rectifier-fed DC
inductive loads e.g.DC motors and solenoids , motor speed controllers.
The heatsink can be reduced,compared to traditional triacs, according to
the high performance at given junction temperatures.
Features
Repetitive Peak Off-State Voltage: 600V/800V
R.M.S On-State Current ( IT(RMS)= 16 A )
High Commutation dv/dt
Isolated heatsink mounted , Isolation Voltage ( VISO = 2500V AC )
High junction temperature operating capability
These Devices are Pb-Free and are RoHS Compliant
Absolute Maximum Ratings
Symbol
VDRM
VRRM
IT(RMS)
ITSM
I2t
dI/dt
IGM
PG(AV)
PGM
Tj
TSTG
Items
Repetitive Peak Off-State Voltage Tj = 25°C
R.M.S On-State Current
TC = 100 °C
Conditions
AIT16CH60
AIT16CH80
Surge On-State Current
tp=20ms(50Hz)/tp=16.7ms(60Hz)
I2t for fusing
tp=10ms
Critical rate of rise of on-state
current
Peak Gate Current
F = 120 Hz Tj = 150°C
IG = 2 x IGT , tr 100 ns
tp = 20 μs Tj = 150°C
Average Gate Power Dissipation(Tj=150°C)
Peak Gate Power Dissipation(tp=20us,Tj=150°C)
Operating Junction Temperature
Storage Temperature
2.T2
3.Gate
1.T1
1 23
TO-220 Isolated
Ratings
600
800
16
180/188
165
50
4
1
10
- 40 ~ 150
- 40 ~ 150
Unit
V
V
A
A
A2s
A/μs
A
W
W
°C
°C
 
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Feb,2013 -Rev.3.02




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AIT16CH60 Datasheet Preview

AIT16CH60 Datasheet

3 Quadrants High temperature Triacs

No Preview Available !

 
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                                                                                  AIT16CH60/80
Electrical Characteristics( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
IDRM
IRRM
VTM
VGD
VGT
IGT
IH
IL
dV/dt
(dV/dt)c
Rth(j-c)
Rth(j-a)
Peak Forward Reverse Blocking
Current
Peak On-State Voltage
Q1-Q2-Q3
NonTrigger Gate
Voltage
Q1-Q2-Q3 Gate Trigger Voltage
Q1-Q2-Q3 Gate Trigger Current
Q1-Q2-Q3
Holding Current
Q1-Q3
Q2
Latching Current
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Change of
Commutating Voltage
Junction to case (AC)
Junction to ambient
VDRM = VRRM, Tj = 25°C
VDRM = VRRM, Tj = 150°C
ITM = 25A, tp = 380 μs
VD = VDRM RL = 3.3 k
Tj = 150°C
VD = 12V RL = 33
IT = 0.1A
IG = 1.2 IGT
VD = 2/3VDRM gate open
Tj = 150°C
VD=400V(dI/dt)c=-7A/ms
Tj = 150°C
Max.
Max.
Min.
Max.
Max.
Max.
Max.
Min.
Min.
Max.
Max.
AIT16CH60/80
S Blank B
5
6.1
1.55
Unit
uA
mA
V
0.2 V
1.5 V
10 35 50 mA
20 45 70 mA
20 50 90
mA
35 80 110
500
1000
1500 V/μs
1 15 20 V/μs
2.1 °C/W
60 °C/W
FIG.1:Triac quadrant are defined and the gate trigger test circuit
T2+
Q2(T2+G-)
RL
Q1(T2+G+)
RL
VD VD
A
V
RG
A
V
RG
G-
RL
G+
VD
A
V
RG
Q3(T2-G-)
T2-
 
2/6
www.advsemi.com
Feb,2013 -Rev.3.02


Part Number AIT16CH60
Description 3 Quadrants High temperature Triacs
Maker ADV
Total Page 6 Pages
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