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AFSEMI

SSCE36V11D3 Datasheet Preview

SSCE36V11D3 Datasheet

TVS Diodes

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SSCEXXX11D3
SSCEXXX11D3 Series
Micro Packaged TVS Diodes for ESD Protection
The SSCEXXX11D3 Series is designed to protect voltage
sensitive components from ESD. Excellent clamping
capability, low leakage, and fast response time provide best
in class protection on designs that are exposed to ESD.
Because of its small size, it is suited for use in cellular
phones, MP3 players, digital cameras and many other
portable applications where board space comes at a
premium.
This series has been specifically designed to protect
sensitive components which are connected to data and
transmission lines from overvoltage caused by
ESD(electrostatic discharge), and EFT (electrical fast
transients).
Feature
200W peak pulse power (TP = 8/20μs)
SOD-523 Package
Working voltage: 3.3V to 36V
Low clamping voltage
Low capacitance
Device Meets MSL 1 Requirements
Low Body Height: 1.68mg
Solid-state silicon avalanche technology
ROHS compliant
PIN configuration
Topview
Applications
USB 2.0 Power & Data Line Protection
DVI & HDMI Port Protection
Serial ATA Port Protection
Mobile Handsets
Digital Cameras and camcorders
PDA & MP3 Players
Digital TV and Set-top Boxes
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
SSC-V1.0
www.afsemi.com
1/6
Analog Future




AFSEMI

SSCE36V11D3 Datasheet Preview

SSCE36V11D3 Datasheet

TVS Diodes

No Preview Available !

Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSCEXXX11D3
I
VF
VC VBR VRWM
IR IF
IT
IPP
V
Absolute maximum rating @TA=25
Symbol
PPP
TSTG
TJ
Parameter
Peak Pulse Power8/20μS
Storage Temperature
Operating Temperature
Value
200
-55/+150
-55/+150
Units
W
Electrical Characteristics @TA=25
Electrical characteristics ( Tamb=25Unless Otherwise Specified)
Device
Marking
VRWM
IR @ VRWM
VBR @ 1 mA
(Volts)
Code
(V)
(uA)
Min
SSCE3V311D3
ZE
3.30
20
4.00
SSCE5V011D3
ZF
5.00
2
6.00
SSCE7V011D3
ZH
7.00
2
9.00
SSCE12V11D3
MA
12.0
2
13.1
SSCE15V11D3
ZN
15.0
2
16.7
SSCE24V11D3
ZQ
24.0
2
26.7
SSCE36V11D3
ZL
36.0
2
40.0
VC
@1A
(V)
7.50
9.80
9.20
17.8
24.0
43.0
69.5
SSC-V1.0
www.afsemi.com
Capacitance
@ VR = 0 V, 1 MHz (pF)
Typ Max
40 55
36 45
70 85
35 45
35 45
30 45
28 40
2/6
Analog Future


Part Number SSCE36V11D3
Description TVS Diodes
Maker AFSEMI
Total Page 6 Pages
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