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AFSEMI

SSCE7V011N1 Datasheet Preview

SSCE7V011N1 Datasheet

TVS Diodes

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SSCE7V011N1
SSCE7V011N1
Lo BVV
Ultra-low Capacitance Unidirectional Micro Packaged TVS Diodes for ESD Protection
Description
PIN configuration
The SSCE7V011N1 is designed with Punch-Through process
TVS technology to protect voltage sensitive components
from ESD. Excellent clamping capability, low leakage, and fast
response time provide best in class protection on designs
that are exposed to ESD. Because of its small size, it is suited
for use in cellular phones, MP3 players, digital cameras and
many other portable applications where board space comes
at a premium. Also because of its low capacitance, it is suited
for use in high frequency designs such as USB 2.0 high speed,
USB 3.0 super speed, VGA, DVI, HDMI, eSATA and other high
speed line applications.
Feature
270W peak pulse power (TP = 8/20μs)
DFN1006 Package
Working voltage: 7V
Low clamping voltage
Low capacitance
RoHS compliant transient protection for high speed data
lines to IEC61000-4-2(ESD)±30kV(air),±30kV(contact)
Topview
Applications
DVI & HDMI Port Protection
Serial and Parallel Ports
Projection TV
Notebooks, Desktops, Servers
Solid-state Punch-Through TVS Process
technologyPortable instrumentation
Machanical data
Lead finish:100% matte Sn(Tin)
Mounting position: Any
Qualified max reflow temperature:260
Device meets MSL 1 requirements
Pure tin plating: 7 ~ 17 um
Pin flatness:≤3mil
SSC-V1.0
www.afsemi.com
1/6
Analog Future




AFSEMI

SSCE7V011N1 Datasheet Preview

SSCE7V011N1 Datasheet

TVS Diodes

No Preview Available !

Electronic Parameter
Symbol
VRWM
IR
VBR
IT
IPP
VC
PPP
C
Parameter
Peak Reverse Working Voltage
Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Peak Pulse Power
Junction Capacitance
SSCE7V011N1
Absolute maximum rating @TA=25
Symbol
PPP
TSTG
TJ
Parameter
Peak Pulse Power8/20μS
Storage Temperature
Operating Temperature
Value
270
-55/+150
-55/+150
Units
W
Electrical Characteristics @TA=25
Parameter
Peak Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
Symbol
VRWM
VBR
IR
VC
CJ
Conditions
It = 1mA
VRWM =5.0V, T=25
IPP = 5A, TP = 8/20μs
IPP = 24A, TP = 8/20μs
VR=0V, f = 1MHz
Min.
7.5
Typ.
0.1
10
Max.
7
9.5
1
10.6
14.4
Units
V
V
μA
V
V
pF
SSC-V1.0
www.afsemi.com
2/6
Analog Future


Part Number SSCE7V011N1
Description TVS Diodes
Maker AFSEMI
Total Page 6 Pages
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