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ALFA

AS194 Datasheet Preview

AS194 Datasheet

NPN Transistor

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AS “АLFA RPAR
Joint Stock Company ALFA
Riga, Latvia www.alfarzpp.lv; alfa@alfarzpp.lv
AS194
AS394
Features
"Ideal" and identical transistors
Common-mode rejection ratio
Emitter-base offset voltage
Emitter-base offset voltage
temperature drift
Current gain (hFE) matched
Parameters are guaranteed in
the range of collector current of
Noise Voltage Density of
Ideal logarithmic properties
Matched NPN transistor pair
> 120dB
< 100µV
0,1µV/ оC
< 2%
10µА tо 1mА
1,8 nV /Hz
AS194H,
AS394H,
AS394CH
AS194DE
AS394DE,
1A50S3м9к4ВCDE
1 мкВ / оС
0,96
General Description
The AS194 and AS394 are junction isolated ultra well-matched monolithic NPN transistor pairs with an
order of magnitude improvement in matching over conventional transistor pairs.
Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the
exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical
transistor. Extrinsic base and emitter resistances is very low, giving very low noise and operating over a wide
current range.
To guarantee long term stability of matching parameters, internal clamp diodes have been added across
the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current-
the most common cause of field failures in matched devices. The parasitic isolation junction formed by the
diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between
devices.
The AS194H, AS394H, AS394CH are available in the 8-pin metal can TO5-8 package and the AS394DE
and AS394CDE in the 8-lead plastic SOIC-8 (150mil) EPAD package.
Connection Diagram
Top View
1
C1 2
88 C2
B1 3
7 B2
4
6
E1
5
E2
AS194H,
AS394H,
AS394CH
Metal Can Package
(ТО5-8)
C1 1
B1 2
E1 3
NC 4
8 C2
7 B2
6 E2
5 NC
AS194DE
AS394DE,
AS394CDE
SOIC-8 (150mil) / EPAD
Pins number
Package type
TO5-8
SOIC-8/
EPAD
1
4
2
1
3
2
4
3
5
5
6
6
7
7
8
8
Pin Information
Symbol
NC
C1
B1
E1
NC
E2
B2
C2
EPAD
Description
Not connected
Collector1
Base1
Emitter1
Not connected
Emitter2
Base2
Collector2
Isolated from
Substrate
Simplified schematics of AS194/394
2019 v.2
1




ALFA

AS194 Datasheet Preview

AS194 Datasheet

NPN Transistor

No Preview Available !

AS “АLFA RPAR
Joint Stock Company ALFA
Riga, Latvia www.alfarzpp.lv; alfa@alfarzpp.lv
Absolute Maximum Ratings
Collector Current
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Substrate Voltage
Collector-Collector Voltage
Base-Emitter Current
AS194, AS394
AS394C
AS194, AS394
AS394C
AS194, AS394
AS394C
AS194, AS394
AS394C
20mА
40V
20V
40V
20V
40V
20V
40V
20V
10mА
AS194
AS394
.
Electrical performance characteristics
Parameter, units
Conditions
Current Gain (hFE)
UCB =0V до UMAX(Note1)
IC=1 mА
IC=100 µА
IC=10 µА
IC=1 µА
Current Gain Match,
UCB= 0 V to UMAX
hFE 1,2 =100[IB] [hFE(MIN)] / IC , % IC=10 µА tо IC=1 mА
UCB = 0 V
Emitter-Base Offset Voltage, µV IC=10 µА tо IC=1 mА
Change in Emitter-Base Offset (Note1)
Voltage vs Collector-Base Voltage IC=10 µА tо IC=1 mА
(CMRR), µV
UCB = 0 V to UMAX
Change in Emitter-Base Offset UCB = 0 V
Voltage vs Collector Current, µV IC=10 µА tо 1 mА
AS194H
AS194DE
Min Typ Max
AS394H
AS394DE
Min Typ Max
AS394СH
AS394CDE
Min Typ Max
350 700
350 550
300 450
300
300 700
250 550
200 450
300
250 500
230 400
150 300
200
0,5 2
0,5 4
15
25 100
150
200
10 25
10 50
10 100
5 25
5 50
5 50
Collector-Base Leakage, nA
UCB = UMAX
0,05 0,3
0,05 0,5
0,05 0,5
Collector- Collector Leakage, nА UCC= UMAX
12
5
5
Input Voltage Noise, nV /Hz
Collector to Emitter Saturation
Voltage, V
UCB=0 V, IC=100 µА
f = 100 Hz - 100 kHz
IC=1 mА, IВ=10 µА
IC=1 mА, IВ=100 µА
1,8
1,8
0,2 0,25 - 0,2 0,25
0,1 0,15 - 0,1 0,15
1,8
0,2 0,25
0,1 0,15
Note 1: Collector-base voltage is swept from 0 to UMAX=35V at a collector current of 10 µA, 100 µA and 1 mA.
2019 v.2
2



Part Number AS194
Description NPN Transistor
Maker ALFA
Total Page 3 Pages
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AS194 Datasheet PDF





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