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AMI SEMICONDUCTOR

AMIS-732128 Datasheet Preview

AMIS-732128 Datasheet

Wide Aperture Spectroscopic Photodiode Arrays

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AMIS-732128, AMIS-732256, AMIS-732512
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Data Sheet
1.0 Description
AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors
employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These
sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with
an optimized geometrical aspect ratio (50µm aperture pitch x 2500µm aperture width) for helping to maintain mechanical stability in
spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of
various lengths - 128, 256 and 512 pixels.
The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A
diagram of its pin out configuration is seen in Figure 1.
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Figure 1: Pin Out Configuration
2.0 Features
65pC saturation capacity for wide dynamic range
Wide spectral response (180 – 1000nm) for UV and IR response
NP junction photodiodes with superior resistance to UV damage
Low dark current
Integration time up to nine seconds at room temperature
Integration time extended to hours by cooling
High linearity
Low power dissipation (less than 1mW)
Geometrical structure for enhanced stability and registration
Standard 22 lead dual-in-line IC package
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
1




AMI SEMICONDUCTOR

AMIS-732128 Datasheet Preview

AMIS-732128 Datasheet

Wide Aperture Spectroscopic Photodiode Arrays

No Preview Available !

AMIS-732128, AMIS-732256, AMIS-732512
50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays
Data Sheet
3.0 Sensor Characteristics
AMI Semiconductor’s self-scanned WSN photodiodes are spaced on a 50µm pitch. The line density is 20 diodes/mm and accordingly
the overall die lengths of the different arrays vary with the number of photodiodes. For example, the 128 pixel array is 6.4mm long, the
256 pixel array is 12.8mm long and the 512 pixel array is 25.6mm long. Each array has four additional dummy photodiodes. On each
side, there is one dark (non-imaging) dummy photodiode and one imaging dummy photodiode. The height of the sensors is 2500µm.
The tall, narrow apertures make these sensors desirable for use in monochromators and spectrographs.
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Figure 2: Geometry and Layout of Photodiode Pixels
During normal operation, the photons incident in or near the NP photodiode junction generate free charges that are collected and stored
on the junction's depletion capacitance. The number of collected charges is proportional to the light exposure. Figure 3 shows the
stored signal charge as function of light exposure at a wavelength of 575nm. The exposure is the product of the light intensity in
nW/cm2 and integration time in seconds. The charge accumulates linearly until reaching the saturation charge, and the corresponding
exposure is the saturation exposure.
The responsivity may be calculated as the saturation charge divided by saturation exposure. The predicted typical responsivity of a
photodiode is 3.5×10-4 C/J/cm2 at 575nm. Figure 4 shows the predicted responsivity of the photodiodes as a function of wavelength.
AMI Semiconductor – Dec. 05, M-20491-001
www.amis.com
2


Part Number AMIS-732128
Description Wide Aperture Spectroscopic Photodiode Arrays
Maker AMI SEMICONDUCTOR
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