The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset designs supporting E911 (GPS enabled).
Key Features
InGaP HBT Technology High Efficiency: 48% AMPS, 37% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode:.
Full PDF Text Transcription for AWT6130 (Reference)
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AWT6130. For precise diagrams, and layout, please refer to the original PDF.
AWT6130 Cellular Dual Mode AMPS/CDMA 3.5V www.DataSheet4U.com 29dBm Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • InGaP HBT Technology ...
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RY DATA SHEET - Rev 1.0 FEATURES • • • • • • • • InGaP HBT Technology High Efficiency: 48% AMPS, 37% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <1 µA Optimized for a 50 Ω System Low Profile Miniature Surface Mount Package CDMA 1XRTT Compliant CDMA 1xEV-DO Compliant APPLICATIONS • • • Single Mode CDMA Wireless Handsets Dual Mode AMPS/CDMA Wireless Handsets Tri Mode CDMA Handsets with GPS M7 Package 10 Pin 4mm x 4mm Surface Mount Module PRODUCT DESCRIPTION The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode handset de
AWT6130 Datasheet
