AWT6167 Datasheet | ANADIGICS

GSM900/DCS .. Dual Band Power Amplifier Module With Integrated Power Control Features - - - - - - - Integrated Vreg (regulated supply) Harmonic Performance ≤ -25 d Bm High Efficiency (PAE) at Pmax: -GSM900, 56 % -DCS, 53 % +35 d Bm GSM900 Output Power at 3.5 V +33 d Bm DCS Output Power at 3.5 V 55 d B dynamic range GPRS Class 12 Capable ADVANCED PRODUCT INFORMATION - Rev 0.1 APPLICATIONS - Dual Band Handsets & PDAs 18 Pin 6 mm x 6 mm x 1.3 mm Amplifier Module PRODUCT DESCRIPTION As with previous generations, the AWT6167 integrated CMOS power control scheme simplifies the design of the transmitter by eliminating the need for external power control circuitry. The AWT6167 input and output terminals are internal matched to 50 ohms and DC blocked, reducing the VCC2 number of external ponents required in the final application. Both PA die, GSM900 and DCS, are fabricated using state of the art In Ga P HBT technology, known for it is proven reliability and temperature stability. DCSIN BS TX MATCH MATCH DCSOUT CMOS BIAS/Integrated Power Control VBATT VREG VRAMP GSM900IN VCC_OUT H(s) MATCH MATCH GSM900OUT VCC2 Figure 1: Block Diagram 01/2005 VCC2 GND .. 16 15 14 13 12...