AWT6168 Datasheet | ANADIGICS

AWT6168 GSM/GPRS/Polar EDGE Power Amplifier .. Module with Integrated Power Control ADVANCED PRODUCT INFORMATION - REV 0.1 Features - Internal Reference Voltage - Integrated Power Control Scheme - In Ga P HBT Technology - ESD Protection on All Pins (2.5 k V) - Low profile 1.3 mm - Small Package Outline 7 mm x 7 mm - EGPRS Capable (class 12) GMSK MODE - Integrated power control (CMOS) - +35 d Bm GSM850/900 Output Power - +33 d Bm DCS/PCS Output Power - 55 % GSM850/900 PAE - 50 % DCS/PCS PAE - Power control range > 50 d B EDGE MODE - +30.5 d Bm GSM850/900 Output Power - +29.5 d Bm DCS/PCS Output Power - 25 % GSM850/900 PAE - 25 % DCS/PCS PAE PRODUCT DESCRIPTION This power amplifier module supports dual, tri and quad band applications for GMSK and 8-PSK modulation schemes using a polar architecture. There are two amplifier chains, one to support GSM850/900 bands, the other for DCS/PCS bands. The module includes an internal reference voltage and integrated power control scheme for use in both GMSK and 8-PSK operation. This facilitates fast and easy production calibration and reduces the number of external ponents required to plete a power control function. The amplifier’s power control range is typically 55 d B, with the output power set by applying an analog voltage to VRAMP. All of the RF ports for this device are internally matched to 50 Ω . Internal DC blocks are provided at the RF inputs. APPLICATIONS - GSM850/GSM900/DCS/PCS Handsets - Dual/Tri/Quad Band PDA - GMSK and 8-PSK Polar Modulation Schemes DCS/PCS_IN DCS/PCS DCS/PCS_OUT BS TX_EN VBATT CEXT...