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ANPEC

APM2677C Datasheet Preview

APM2677C Datasheet

P-Channel MOSFET

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APM2677C
P-Channel Enhancement Mode MOSFET
Features
-20V/-5A,
RDS(ON)=28m(typ.) @ VGS=-4.5V
RDS(ON)=36m(typ.) @ VGS=-2.5V
RDS(ON)=50m(typ.) @ VGS=-1.8V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Pin Description
D DS
D DG
Top View of SOT-23-6
(4)S
(3)G
DD DD
(1,2,5,6)
P-Channel MOSFET
Ordering and Marking Information
APM2677
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
C : SOT-23-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2677C :
M77X
X - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. B.2 - Apr., 2009
www.anpec.com.tw




ANPEC

APM2677C Datasheet Preview

APM2677C Datasheet

P-Channel MOSFET

No Preview Available !

APM2677C
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 5sec.
VGS =-4.5V
TA=25°C
TA=100°C
Rating
-20
±12
-5
-20
-1.3
150
-55 to 150
1.4
0.5
90
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±12V, VDS=0V
VGS=-4.5V, IDS=-5A
RDS(ON) a Drain-Source On-State Resistance VGS=-2.5V, IDS=-3A
VSDa Diode Forward Voltage
Gate Charge Characteristics b
VGS=-1.8V, IDS=-2A
ISD=-1.3A, VGS=0V
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-5A
APM2677C
Min. Typ. Max.
-20 -
-
-
-
-1
-
- -30
-0.5 -0.7 -1
-
- ±100
-
28 35
-
36 48
-
50 75
- -0.7 -1.3
-
17 22
-
3.8
-
-
4.7
-
Unit
V
µA
V
nA
m
V
nC
Copyright © ANPEC Electronics Corp.
2
Rev. B.2 - Apr., 2009
www.anpec.com.tw



Part Number APM2677C
Description P-Channel MOSFET
Maker ANPEC
Total Page 3 Pages
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