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ANPEC

APM2704CG Datasheet Preview

APM2704CG Datasheet

Dual-Channel MOSFET

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APM2704CG
Dual Enhancement Mode MOSFET (N- and P-Channel)
Features
N-Channel
20V/4A,
RDS(ON)=30m(typ.) @ VGS=4.5V
RDS(ON)=40m
(typ.)
@
V =2.5V
GS
RDS(ON)=67m
(typ.)
@
V =1.8V
GS
P-Channel
-20V/-3A,
RDS(ON)=56m(typ.) @ VGS=-4.5V
RDS(ON)=85m(typ.) @ VGS=-2.5V
RDS(ON)=135m(typ.) @ VGS=-1.8V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
4
5
6
3
2
1
Top View of JSOT-6
(6)D1
(4)D2
(1)G1
(3)G2
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(5)S1
N-Channel MOSFET
(2)S2
P-Channel MOSFET
Ordering and Marking Information
APM2704
APM2704 CG :
Assembly Material
Handling Code
Temperature Range
Package Code
M2704
XXXXX
Package Code
CG : JSOT-6
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. A.4 - Dec., 2008
www.anpec.com.tw




ANPEC

APM2704CG Datasheet Preview

APM2704CG Datasheet

Dual-Channel MOSFET

No Preview Available !

APM2704CG
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID* Continuous Drain Current
IDM* Pulsed Drain Current
VGS=4.5V (N)
VGS=-4.5V (P)
IS* Diode Continuous Forward Current
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
PD* Power Dissipation
TA=25°C
TA=100°C
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 10sec.
Rating
Unit
N Channel P Channel
20
-20
V
±10
±10
4
-3
A
15
-10
1
-0.6
A
150
°C
-55 to 150
1
W
0.4
125
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
VSDa Diode Forward Voltage
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=16V, VGS=0V
TJ=85°C
VDS=-16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±10V, VDS=0V
VGS=±10V, VDS=0V
ISD=1A, VGS=0V
ISD=-0.6A, VGS=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM2704CG
Unit
Min. Typ. Max.
20
-
-20
-
-
V
-
-
-
1
-
-
30
µA
-
-
-1
-
-
-30
0.5 0.75 1
V
-0.5 -0.75 -1
-
- ±10
-
-
±10 µA
-
0.6 1.3
V
- -0.6 -1.3
Copyright © ANPEC Electronics Corp.
2
Rev. A.4 - Dec., 2008
www.anpec.com.tw



Part Number APM2704CG
Description Dual-Channel MOSFET
Maker ANPEC
Total Page 3 Pages
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APM2704CG Datasheet PDF





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