900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






ANPEC

APM2805QA Datasheet Preview

APM2805QA Datasheet

P-Channel MOSFET

No Preview Available !

APM2805QA
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
Pin Description
MOSFET
-20V/-2.6A,
RDS(ON)= 85m(typ.) @ VGS= -4.5V
RDS(ON)= 120m(typ.) @ VGS= -2.5V
Super High Dense Cell Design
Reliable and Rugged
SBD
VF=0.45V (typ.) @ If=500mA.
Lead Free and Green Devices Available
(RoHS Compliant)
C8 C7 D6 D5
A1
A2
S3
G4
Top View of DFN3x2-8
D (5, 6)
C (7, 8)
G (4)
Applications
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
S (3)
P-Channel
A (1, 2)
SBD
APM2805
APM2805 QA :
Assembly Material
Handling Code
Temperature Range
Package Code
M2805
XXXXX
Package Code
QA : DFN3x2-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. A.3 - Apr., 2009
www.anpec.com.tw




ANPEC

APM2805QA Datasheet Preview

APM2805QA Datasheet

P-Channel MOSFET

No Preview Available !

APM2805QA
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
[MOSFET]
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA*
[SBD]
VRRM
VR
Thermal Resistance-Junction to Ambient
Repetitive Peak Reverse Voltage
DC Blocking Voltage
IF Average Rectified Forward Current
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 5sec.
VGS=-4.5V
TA=25°C
TA=100°C
Steady State
t 5s
Steady State
t 5s
Rating
-20
±10
-2.6
-9
-1.4
150
-55 to 150
1.13
0.45
110
20
20
1
2
130
100
Unit
V
A
A
°C
W
°C/W
V
V
A
A
°C/W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
[MOSFET]
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA
IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V
TJ=85°C
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=-250µA
IGSS Gate Leakage Current
VGS=±10V, VDS=0V
RDS(ON) a Drain-Source On-state Resistance VGS=-4.5V, IDS=-2.6A
VGS=-2.5V, IDS=-2A
APM2805QA
Min. Typ. Max.
-20 -
-
-
-
-1
-
- -30
-0.45 -0.7 -1
-
- ±10
-
85 110
- 120 160
Unit
V
µA
V
µA
m
Copyright © ANPEC Electronics Corp.
2
Rev. A.3 - Apr., 2009
www.anpec.com.tw



Part Number APM2805QA
Description P-Channel MOSFET
Maker ANPEC
Total Page 3 Pages
PDF Download

APM2805QA Datasheet PDF





Similar Datasheet

1 APM2805QA P-Channel MOSFET
ANPEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy