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APM3054ND Datasheet Preview

APM3054ND Datasheet

N-Channel MOSFET

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APM3054ND
Features
30V/4A,
RDS(ON)=48m(typ.) @ VGS=10V
RDS(ON)=75m(typ.) @ VGS=4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
G
D
S
Top View of SOT-89
(2)
D
Applications
Switching Regulators
Switching Converters
(1)
G
S
(3)
N-Channel MOSFET
Ordering and Marking Information
APM3054N
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
D : SOT-89
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM3054N D:
APM3054
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. B.4 - Dec., 2008
www.anpec.com.tw




ANPEC

APM3054ND Datasheet Preview

APM3054ND Datasheet

N-Channel MOSFET

No Preview Available !

APM3054ND
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Power Dissipation for Single Operation
RθJA* Thermal Resistance-Junction to Ambient
Note : *Surface Mounted on 1in2 pad area, t 10sec.
VGS=10V
TA=25°C
TA=100°C
Rating
30
±20
4
16
1
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VSDa Diode Forward Voltage
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
APM3054ND
Min. Typ. Max.
VGS=0V, IDS=250µA
30
VDS=24V, VGS=0V
-
TJ=85°C -
VDS=VGS, IDS=250µA
1
VGS=±20V, VDS=0V
-
VGS=10V, IDS=4A
-
VGS=4.5V, IDS=3A
-
ISD=1A, VGS=0V
-
-
-
-
1
-
30
1.5 2
- ±100
48 54
75 90
0.75 1.3
VDS=15V, VGS=10V,
IDS=4A
- 17.6 24
-
5.2
-
-
2.8
-
Unit
V
µA
V
nA
m
V
nC
Copyright © ANPEC Electronics Corp.
2
Rev. B.4 - Dec., 2008
www.anpec.com.tw



Part Number APM3054ND
Description N-Channel MOSFET
Maker ANPEC
Total Page 3 Pages
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APM3054ND Datasheet PDF





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