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ANPEC

APM9934K Datasheet Preview

APM9934K Datasheet

Dual-Channel MOSFET

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APM9934K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
N-Channel
20V/9A,
RDS(ON) =15m(typ.) @ VGS = 4.5V
RDS(ON) =22m(typ.) @ VGS = 2.5V
P-Channel
-20V/-6A,
R
DS(ON)
=35m
(typ.)
@
V
GS
=-4.5V
R
DS(ON)
=45m
(typ.)
@
V
GS
=-2.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Pin Description
D
D
D
D
S1
G1
S2
G2
Top View of SOP 8
(8) (7)
(3)
D1 D1
S2
(4)
G2
(2)
G1
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S1
D2 D2
(1)
(5) (6)
N-Channel MOSFET P-Channel MOSFET
Ordering and Marking Information
APM9934
APM9934K :
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9934K
XXXXX
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
1
Rev. B.3 - Jan., 2007
www.anpec.com.tw




ANPEC

APM9934K Datasheet Preview

APM9934K Datasheet

Dual-Channel MOSFET

No Preview Available !

APM9934K
Absolute
Maximum
Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
VDSS
VGSS
ID*
IDM*
IS*
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
VGS=±4.5V
TJ
TSTG
Maximum Junction Temperature
Storage Temperature Range
PD*
Power Dissipation
TA=25°C
TA=100°C
RθJA* Thermal Resistance-Junction to Ambient
Note:*Surface Mounted on 1in2 pad area, t 10sec.
N Channel P Channel
20
-20
±12
±12
9
-6
40
-30
5
-4
150
-55 to 150
2
0.8
62.5
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Test Condition
Static Characteristics
BVDSS
Drain-Source Breakdown
Voltage
IDSS
Zero Gate Voltage Drain
Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a
Drain-Source On-State
Resistance
VSDa Diode Forward Voltage
VGS=0V, IDS=250µA
VGS=0V, IDS=-250µA
VDS=16V, VGS=0V
VDS=-16V, VGS=0V
VDS=VGS, IDS=250µA
VDS=VGS, IDS=-250µA
VGS=±12V, VDS=0V
VGS=±12V, VDS=0V
VGS=4.5V, IDS=9A
VGS=-4.5V, IDS=-6A
VGS=2.5V, IDS=7A
VGS=-2.5V, IDS=-5A
ISD=5A, VGS=0V
ISD=-2A, VGS=0V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
APM9934K
Unit
Min. Typ. Max.
20
V
-20
1
µA
-1
0.5 0.7 1.5
V
-0.5 -0.7 -1.5
±100
±100 nA
15 20
35 45
m
22 32
45 60
0.8 1.3
V
-0.8 -1.3
Copyright © ANPEC Electronics Corp.
2
Rev. B.3 - Jan., 2007
www.anpec.com.tw



Part Number APM9934K
Description Dual-Channel MOSFET
Maker ANPEC
Total Page 3 Pages
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