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PF8N60 - FQPF8N60

Description

This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 7.5A,600V,RDS(on)=1.0Ω@VGS=10V.
  • Low gate charge.
  • Low Crss (typical 23pF).
  • Fast switching.
  • 100% AvalancheTested.
  • Improved dv/dt capability.
  • ROHS product General.

📥 Download Datasheet

Datasheet Details

Part number PF8N60
Manufacturer AOKE
File Size 560.64 KB
Description FQPF8N60
Datasheet download datasheet PF8N60 Datasheet

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    Full PDF Text Transcription

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    FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% AvalancheTested ■ Improved dv/dt capability ■ ROHS product General Description This Power MOSFET is produced using AOKE’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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