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AOKE

PF8N60 Datasheet Preview

PF8N60 Datasheet

FQPF8N60

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FQP8N60/FQPF8N60
600V N-Channel MOSFET
Features
7.5A,600V,RDS(on)=1.0@VGS=10V
Low gate charge
Low Crss (typical 23pF)
Fast switching
100% AvalancheTested
Improved dv/dt capability
ROHS product
General Description
This Power MOSFET is produced using AOKE’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power
factor correction, electronic lamp ballasts based on half bridge
topology.
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
FQP8N60 FQPF8N60
600
7.5 7.5*
4.4 4.4*
(Note 1)
28
28*
±30
(Note 2)
420
(Note 1)
14.7
(Note 3)
5.5
147
1.18
48
0.38
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/ °C
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5
seconds.
-55 ~ 150
300
°C
°C
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ
Thermal Resistance, Junction-to-Ambient
FQP8N60
0.85
0.5
62.5
FQPF8N60 Units
2.6 °C/W
0.5 °C/W
62.5
°C/W
1/7




AOKE

PF8N60 Datasheet Preview

PF8N60 Datasheet

FQPF8N60

No Preview Available !

FQP8N60/FQPF8N60
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol
Parameter
Off Characteristics
BVDSS
Δ BVDSS
Δ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
coefficient
IDSS Drain-Source Leakage Current
Gate-Source Leakage, Forward
IGSS
Gate-source Leakage, Reverse
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-state Resis-
tance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-on Delay Time
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge(Miller Charge)
Test Conditions
VGS = 0V, ID = 250uA
ID = 250uA, referenced to 25 °C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125 °C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
VDS = VGS, ID = 250uA
VGS =10 V, ID = 3.75A
VGS =0 V, VDS =25V, f = 1MHz
VDD =300V, ID =7.5A, RG =25
(Note 4, 5)
VDS =480V, VGS =10V, ID =7.5A
(Note 4, 5)
Drain-Source Diode Ratings and Characteristics
Symbl
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS=7.5A, VGS =0V
IS=7.5A, VGS=0V,dIF/dt=100A/us
IS=7.5A, VGS=0V,dIF/dt=100A/us
Min
600
-
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
-
Typ
-
0.65
-
-
-
-
-
1.0
1380
115
23
30
80
125
85
40
6
20
Typ.
-
-
-
415
4.6
Max Units
-
-
10
100
100
-100
V
V/°C
uA
uA
nA
nA
4.0 V
1.2
1800
150
30
pF
70
170
ns
260
180
48
- nC
-
Max.
7.5
28
1.4
-
-
Unit.
A
V
ns
uC
NOTES
1. Pulse width limited by maximum junction temperature
2. L = 15.7mH, IAS =7.5A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 7.5A, di/dt 300A/us, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width 300us, Duty Cycle 2%
5. Essentially independent of operating temperature
2/7


Part Number PF8N60
Description FQPF8N60
Maker AOKE
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PF8N60 Datasheet PDF






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