DESCRIPTION
AP2604C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D BVDSS RDS(ON) ID4 25V 0.65mΩ 375A S PDFN 5x6 D DDD GS S S Bottom View Top View ABSOLUTE MAXIMUM RATINGS
@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TC=25℃ PD@TA=25℃ EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Drain Current (Chip), VGS @ 10V4 Drain Current, VGS @ 10V4(Package Limited) Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Single Pulse Avalanche Energy5 Storage Temperature Range Operating Junction Temperature Range 25 +20 375 100 71 57 650 138.8 5 714 -55 to 150 -55 to 150 V V A A A A A W W mJ ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a...