DESCRIPTION
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. BVDSS RDS(ON) ID 50V 1.8Ω 520mA D2 S1 D1 SOT-26 G2 S2 G1 ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 50 ±20 520 410 1.5 0.8 0.006 -55 to 150 -55 to 150 Units V V mA mA A W W/℃ ℃ ℃ Max. Value 150 Unit ℃/W Data and specifications subject to change without notice 200624051-1/4 AP2622GY ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDSS IGSS Qg...
Advanced Power Electronics
