DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID G D S 100V 15mΩ 65A TO-220(P) GD S TO-263(S) ABSOLUTE MAXIMUM RATINGS
@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 100 +20 65 41 260 138 1.11 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.9 40 62 Units ℃/W ℃/W ℃/W 1 201411055 AP75T10GS/P-HF ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics
