DESCRIPTION
AP80N03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. G DS TO-220(P) GD S TO-263(S) ABSOLUTE MAXIMUM RATINGS
@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage VGS Gate-Source Voltage 30 V +20 V ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 80 50 315 83.3 -55 to 150 -55 to 150 A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value 1.5 40 62 Unit ℃/W ℃/W ℃/W 1 201408263 AP80N03GS/P-HF ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics
