AP93T03AGH-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP93T03AGH-HF

The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.

Part No.	AP93T03AGH-HF
Datasheet	AP93T03AGH-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

AP93T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID4 30V 4.8mΩ 90A G D S TO-252(H)

ABSOLUTE MAXIMUM RATINGS

@Tj=25oC. (unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current (Chip), VGS @ 10V Drain Current4, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range +20 90 75 57 210 62.5 2 -55 to 150 -55 to 150 V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Rthj-a Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Data & specifications subject to cha...