AP9435GH-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP9435GH-HF

The TO-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (AP9435GJ) are available for low-profile applications.

Part No.	AP9435GH-HF
Datasheet	AP9435GH-HF Download
Manufacturer	Advanced Power Electronics
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

AP9435 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID -30V 50mΩ - 20A G D S TO-252(H) G D S TO-251(J) Absolute Symbol Maximum RatingPsa@ramTej=te2r 5oC. (unless otherwise specified) Rating Units VDS Drain-Source Voltage - 30 V VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor +20 V - 20 A -13 A -60 A 12.5 W 0.1 W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specificat...