DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID G D S 75V 3.6mΩ 220A TO-220(P) ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TC=25℃ IDM PD@TC=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V(Package Limited) Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Rating 75 +20 220 150 120 880 375 -55 to 175 -55 to 175 Units V V A A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maixmum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value 0.4 62 Units ℃/W ℃/W 1 200907281 AP97T07GP-HF ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.
Advanced Power Electronics
