Advanced Power Electronics AP9926GEO-HF
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | AP9926GEO-HF |
|---|---|
| Datasheet | AP9926GEO-HF Download |
| Manufacturer |  Advanced Power Electronics |
| Description | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 S1 D1 BVDSS RDS(ON) ID D1 G1 G2 S1 20V 28mΩ 4.6A D2 S2ABSOLUTE MAXIMUM RATINGS
@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 + 12 4.6 3.7 20 1 0.008 V V A A A W W/℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 125 Unit ℃/W 1 201501273 AP9926GEO-HFELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VG...
