Advanced Power Electronics AP9975GM
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | AP9975GM |
|---|---|
| Datasheet | AP9975GM Download |
| Manufacturer |  Advanced Power Electronics |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
DESCRIPTION
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G2 S2 G1 S1 BVDSS RDS(ON) ID 60V 21mΩ 7.6A D1 D2 G1 G2 S1 S2ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 60 +25 7.6 6.1 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201011182 AP9975GMELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ΔBVDSS/ΔTj RDS(ON) VGS(th) gfs IDS...
