DESCRIPTION
AP9985 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 40V 15mΩ 10A D G S ABSOLUTE MAXIMUM RATINGS
@Tj=25o.C(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Gate-Source Voltage Drain Current3, VGS @ 10V Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +20 10 8 48 2.5 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Parameter Rthj-amb Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 50 Unit ℃/W 1 201410213 AP9985GM-HF ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ.
Advanced Power Electronics
