AP99T03GS-HF Datasheet PDF | Advanced Power Electronics

Advanced Power Electronics AP99T03GS-HF

The TO-263 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.

Part No.	AP99T03GS-HF
Datasheet	AP99T03GS-HF Download
Manufacturer	Advanced Power Electronics
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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DESCRIPTION

AP99T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. BVDSS RDS(ON) ID 30V 2.5mΩ 200A G D S TO-263(S)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, VGS @ 10V3 Continuous Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Rating 30 +20 200 120 120 800 156 3.12 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)4 Data and specifications subject to change with...