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APEHT-0103 Datasheet High Temperature Silicon Carbide Schottky Diode

Manufacturer: APEI

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Datasheet Details

Part number APEHT-0103
Manufacturer APEI
File Size 396.28 KB
Description High Temperature Silicon Carbide Schottky Diode
Download APEHT-0103 Download (PDF)

Overview

PRELIMINARY APE HT-0103 High Temperature Silicon Carbide Schottky.

Key Features

  • High temperature: Tc(max) = 225 C 1200 V / 10 A / 64 nC Tj(max) = 225 C.
  • AS9100:Rev. C-certified manufacturing, traceable throughout value chain.
  • Near zero forward and reverse recovery.
  • Extremely fast switching.
  • High system efficiency.
  • Hermetic seal; flux free, void free packaging.
  • Backside isolation.
  • High reliability.

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