AM4N65R Description
AM4N65R 650V 4A Advanced N-Ch Power MOSFET.
AM4N65R Key Features
- Low drain-source On resistance : RDS(on) = 2.4Ω (Typ.)
- Low gate charge : Qg = 12nC (Typ.)
- Low reverse transfer capacitance : Crss = 12pF (Typ.)
- Lower EMI Noise
- RoHS pliant device
- 100% avalanche tested
- YY : Year Code
- WW : Week Code Ordering Information
- Limited only maximum junction temperature
- 55~150