FTP04N60
FTA04N60
Thermal data
Symbol
Parameter
Thermal resistance
RθJC Junction-to-Case
Max
Thermal resistance
RθJA Junction-to-Ambient
Max
FTP04N60
1.45
62
FTA04N60
4.5
100
Units
℃/W
Test Conditions
Water cooled heat sink，PD adjusted for
a peak junction temperature of +150℃
1 cubic foot chamber, free air.
Electrical Characteristics
OFF Characteristics TJ =25℃ unless otherwise specified
Symbol
BVDSS
△BVDSS/△TJ
IDSS
IGSS
Parameter
Drain-to-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Min.
600
--
--
--
Gate-to-Source Forward Leakage
--
--
Typ. Max. Units
-- -- V
0.6 -- V/℃
-- 12
µA
-- 250
-- 100 nA
-- -100
ON Characteristics TJ =25℃ unless otherwise specified
Test Conditions
VGS=0V, ID=250µA
Reference to 25℃,
ID=250µA
VDS=600V, VGS=0V
VDS=480V, VGS=0V,
TJ=125℃
VGS=+30V
VGS=-30V
Symbol
Parameter
Min. Typ. Max. Units
RDS(ON) Static Drain-to-Source On-Resistance
-- 1.76 2.2
Ω
VGS(TH)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 -- 4.0
-- 3.75
--
V
S
Dynamic Characteristics Essentially independent of operating temperature
Symbol
CISS
COSS
CISS
QG
QGS
QGD
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Min. Typ. Max. Units
-- --
--
-- --
-- --
-- pF
--
-- --
--
-- --
-- --
-- nC
--
Test Conditions
VGS=10V, ID=2.4A
(NOTE*4)
VDS = VGS, ID=250µA
VDS =15V, ID=4A
(NOTE*4)
Test Conditions
VGS=0V
VDS=25V
f=1.0MHZ
VDD=300V
ID=4A
©2008 ARK Microelectronics Co., Ltd.
FTP04N60/FTA04N60 Rev.A. Aug.2008
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