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FTP04N60 Datasheet Preview

FTP04N60 Datasheet

600V N-Channel MOSFET

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600V, N-Channel MOSFET
General Features
• Low ON Resistance
• Low Gate Charge
• Peak Current vs. Pulse Width Curve
• RoHS Compliant/Lead Free Package
• Inductive Switching Curves
Applications
• SMPS Power Supply
• Adaptor/Charger
• TV Main Power
• LCD Panel Power
BVDSS
600V
RDS(ON) (Max.)
2.2
FTP04N60
FTA04N60
ID
4.0A
Ordering Codes
Part Number
FTP04N60
FTA04N60
Package
TO-220
TO-220F
Marking
FTP04N60
FTA04N60
Electrical Ratings
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
FTP04N60 FTA04N60
VDS
ID
ID@100
IDM
PD
VGS
EAS
dv/dt
TL
TPKG
TJ and TSTG
Drain-to-Source Voltage
(NOTE*1)
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@10V
Power Dissipation
(NOTE*2)
Derating Factor above 25
Gate-to-Source Voltage
Single Pulse Avalanche
Energy L=10mH, ID=4.0A
Peak Diode Recovery dv/dt
(NOTE*3)
Maximum Temperature for Soldering Leads at
0.063 in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage Temperature
Range
600
4.0
2.5
16.0
86
0.69
±30
80
3.0
300
260
28
0.22
-55 to 150
Units
V
A
W
W/
V
mJ
V/ns
*Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the
“Absolute Maximum Ratings” Table may cause permanent damage to the device.
©2008 ARK Microelectronics Co., Ltd.
FTP04N60/FTA04N60 Rev.A. Aug.2008
1/4




ARK

FTP04N60 Datasheet Preview

FTP04N60 Datasheet

600V N-Channel MOSFET

No Preview Available !

FTP04N60
FTA04N60
Thermal data
Symbol
Parameter
Thermal resistance
RθJC Junction-to-Case
Max
Thermal resistance
RθJA Junction-to-Ambient
Max
FTP04N60
1.45
62
FTA04N60
4.5
100
Units
/W
Test Conditions
Water cooled heat sinkPD adjusted for
a peak junction temperature of +150
1 cubic foot chamber, free air.
Electrical Characteristics
OFF Characteristics TJ =25unless otherwise specified
Symbol
BVDSS
BVDSS/TJ
IDSS
IGSS
Parameter
Drain-to-Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Drain-to-Source Leakage Current
Min.
600
--
--
--
Gate-to-Source Forward Leakage
--
--
Typ. Max. Units
-- -- V
0.6 -- V/
-- 12
µA
-- 250
-- 100 nA
-- -100
ON Characteristics TJ =25unless otherwise specified
Test Conditions
VGS=0V, ID=250µA
Reference to 25,
ID=250µA
VDS=600V, VGS=0V
VDS=480V, VGS=0V,
TJ=125
VGS=+30V
VGS=-30V
Symbol
Parameter
Min. Typ. Max. Units
RDS(ON) Static Drain-to-Source On-Resistance
-- 1.76 2.2
VGS(TH)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 -- 4.0
-- 3.75
--
V
S
Dynamic Characteristics Essentially independent of operating temperature
Symbol
CISS
COSS
CISS
QG
QGS
QGD
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Min. Typ. Max. Units
-- --
--
-- --
-- --
-- pF
--
-- --
--
-- --
-- --
-- nC
--
Test Conditions
VGS=10V, ID=2.4A
(NOTE*4)
VDS = VGS, ID=250µA
VDS =15V, ID=4A
(NOTE*4)
Test Conditions
VGS=0V
VDS=25V
f=1.0MHZ
VDD=300V
ID=4A
©2008 ARK Microelectronics Co., Ltd.
FTP04N60/FTA04N60 Rev.A. Aug.2008
2/4


Part Number FTP04N60
Description 600V N-Channel MOSFET
Maker ARK
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FTP04N60 Datasheet PDF






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