Operating From 8.0 to 12.4 GHz. MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 5.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 .

The ASI 1N23A is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. MAXIMUM RATINGS IF 20 mA VR 1.0 V PDISS 5.0 (ERGS) @ TC = 25 °C TJ -55 °C to +150 °C TSTG -55 °C to +150 °C NONE CHARACTERISTICS TC = 25 °C S.

1N2382

1N2383

1N2384

1N2385

1N23E

1N23WE

1N23WG

1N200

1N2008

1N2009

1N201

1N2010

1N2011