1N831 diode equivalent, silicon mixer diode.
* High burnout resistance
* Low noise figure
* Hermetically sealed package
MAXIMUM RATINGS
IF 20 mA
VR 1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ -55 °C to.
Operating From 2.0 to 4.0 GHz.
FEATURES:
* High burnout resistance
* Low noise figure
* Hermetically sealed .
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