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SILICON MIXER DIODE
1N831
DESCRIPTION:
The ASI 1N831 is a Silicon Mixer
Diode Designed for Applications Operating From 2.0 to 4.0 GHz.
FEATURES:
• High burnout resistance • Low noise figure • Hermetically sealed package
MAXIMUM RATINGS
IF 20 mA
VR 1.0 V
PDISS
2.0 (ERGS) @ TC = 25 °C
TJ -55 °C to +150 °C
TSTG
-55 °C to +150 °C
PACKAGE STYLE DO- 7
NONE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
NF
f = 3060 MHz PLO = 1.0 mW
NFif = 1.5 dB
RL = 100 Ω
IF = 30 MHz
NR
f = 3060 MHz PLO = 1.0 mW
NFif = 1.5 dB
RL = 100 Ω
IF = 30 MHz
LC f = 3060 MHz PLO = 0.5 mW
Z IF
RL = 22 Ω
f = 1000 Hz
frange
MINIMUM TYPICAL
300 2.0
MAXIM 8.3
1.5
5.5 500 4.0
UNITS dB
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dB Ω GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
1N831 Datasheet
