2N6093 transistor equivalent, npn silicon rf power transistor.
With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θ.
The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode.
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC
O O
10 A 35 V 83.3 W @ TC = 75 C .
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