• Part: AM1214-300
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: ASI
  • Size: 283.52 KB
Download AM1214-300 Datasheet PDF
ASI
AM1214-300
AM1214-300 is NPN SILICON RF POWER TRANSISTOR manufactured by ASI.
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AM1214-300 is Designed for 1200 - 1400 MHz, L-Band Applications. .. PACKAGE STYLE .400 2L FLG(A) 4x .062 x 45° 2x B A .040 x 45° C F E D G H J K Features : - Internal Input/Output Matching Network - mon Base - PG = 6.5 db at 325 W/1400 MHz - Omnigold™ Metalization System D IM A B C D E F G H 2x R N M M IN IM U M inches / m m M AXIM U M inches / m m .135 / 3.43 .100 / 2.54 .050 / 1.27 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .490 / 12.45 .100 / 2.54 .690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 .396 / 10.06 .130 / 3.30 .407 / 10.34 .510 / 12.95 .710 / 18.03 .910 / 23.11 .006 / 0.18 .072 / 1.83 .131 / 3.33 .230 / 5.84 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 18.75 A 55 V 730 W @ TC = 25 °C -65 °C to +250 °C -65 °C to +200 °C 0.24 °C/W I J K L M N P CHARACTERISTICS SYMBOL BVCBO BVCES BVEBO ICES h FE PG ηC POUT IC = 50 m A IC = 50 m A IE = 15 m A VCE = 50 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 65 65 3.0...