HVV1011-035 Overview
The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
Datasheet Details
| Part number | HVV1011-035 |
|---|---|
| Datasheet | HVV1011-035-ASI.pdf |
| File Size | 171.27 KB |
| Manufacturer | ASI |
| Description | RF transistor |
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