MRA1417-2 - NPN SILICON RF POWER TRANSISTOR

ASI

General Description

The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz.

MRA1417-2 npn silicon rf power transistor by ASI - Datasheet Preview

Datasheet Details

Part number	MRA1417-2
Manufacturer	ASI
File Size	27.14 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	MRA1417-2 Datasheet

Full PDF Text Transcription for MRA1417-2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRA1417-2. For precise diagrams, and layout, please refer to the original PDF.

MRA1417-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRA1417-2 is a Common Base Device Designed for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES...

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igned for Class C Power Amplifier Applications up to 1.7 GHz. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC 0.5 A VCBO 50 V PDISS 12 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 15 °C/W PACKAGE STYLE 250 2L FLG (C) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS BVCES IC = 20 mA BVEBO IE = 0.25 mA ICBO VCB = 28 V hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 3.5 0.5 10 100 Cob VCB = 28 V f = 1.0 MHz 4.5 PG ηC VCE = 28 V POUT = 2.0 W f = 1700 MHz 8.0 45 UNITS V V mA --- pF dB % A D V A N C E D S E M I C O N D U

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