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MRA1417-6H - NPN SILICON RF POWER TRANSISTOR

General Description

The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links.

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Datasheet Details

Part number MRA1417-6H
Manufacturer ASI
File Size 25.69 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet MRA1417-6H Datasheet

Full PDF Text Transcription for MRA1417-6H (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRA1417-6H. For precise diagrams, and layout, please refer to the original PDF.

MRA1417-6H NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA1417-6H is a Common Base Device Designed for Class C Amplifier Applications in L-Band FM Microwave Links. F...

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ned for Class C Amplifier Applications in L-Band FM Microwave Links. FEATURES INCLUDE: • Gold Metallization • Emitter Ballasting • Input Matching MAXIMUM RATINGS IC 1.0 A VCBO PDISS TJ TSTG θJC 50 V 19 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 9.0 OC/W PACKAGE STYLE .250 2L FLG (B) 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCBO BVCES BVEBO IC = 25 mA IC = 25 mA IE = 3.0 mA hFE VCE = 5.0 V IC = 100 mA MINIMUM TYPICAL MAXIMUM 50 55 3.5 20 100 Cob VCB = 28 V f = 1.0 MHz 6.5 PG ηC VCE = 28 V POUT = 6.0 W f = 1400 - 1700 MHz 7.2 7.5 40 UNITS V V V --- pF dB % A D V A N C E D

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