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MRF227 - SILICON NPN RF POWER TRANSISTOR

Description

The MRF227 is designed for large signal power amplifier applications operating to 225 MHz MAXIMUM RATINGS IC 0.6 A VCB 36 V VCE PDISS TJ TSTG 16 V 8 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS TC = 25 OC SYMBOL T

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Datasheet Details

Part number MRF227
Manufacturer ASI
File Size 18.81 KB
Description SILICON NPN RF POWER TRANSISTOR
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Full PDF Text Transcription

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MRF227 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF227 is designed for large signal power amplifier applications operating to 225 MHz MAXIMUM RATINGS IC 0.6 A VCB 36 V VCE PDISS TJ TSTG 16 V 8 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC PACKAGE STYLE TO-39 1 = EMITTER 2 = BASE 3 = COLLECTOR CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS BVCEO IC = 50 mA BVCES IC = 50 mA BVEBO IC = 1.0 mA ICBO VCE = 15 V HFE VCE = 5.0 V IC = 100 mA MINIMUM 16 36 4.0 TRANS1.SYM TYPICAL MAXIMUM 1.0 20 200 UNITS V V V mA --- COB VCB = 12.5 V f = 1.0 MHz GPE POUT = 3.0 W VCE = 12.5 V f = 225 MHz 13.5 15 15 Pf dB η POUT = 3.0 W VCE = 12.5 V f = 225 MHz 60 % A D V A N C E D S E M I C O N D U C T O R, I N C.
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