MRF581 Datasheet, transistor equivalent, ASI

PDF File Details

Part number: MRF581

Manufacturer: ASI

File Size: 26.57KB

Download: 📄 Datasheet

Description: NPN SILICON RF TRANSISTOR

Datasheet Preview: MRF581 📥 Download PDF (26.57KB)

MRF581 Features and benefits


* Low Noise Figure
* Low Intermodulation Distortion
* High Gain
* Omnigold™ Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO.

MRF581 Application

up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES:
* Low Noise Figure
* Low Intermodulation Distortion
.

MRF581 Description

The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. PACKAGE STYLE Dim. Are in mm FEATURES:
* Low Noise Figure
* Low Intermodulation Distortion
* High Gain
* Omnigold™ Metalization System MAXIMUM.

Image gallery

TAGS

MRF581
NPN
SILICON
TRANSISTOR
ASI

📁 Related Datasheet

MRF580 - HIGH FREQUENCY TRANSISTOR (Motorola)
MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Em.

MRF581 - HIGH FREQUENCY TRANSISTOR (Motorola)
MRF580 MAXIMUM RATINGS Rating Symbol MRF581 MRF581 Unit Collector-Emitter Voltage vCEO 18 18 Vdc Collector-Base Voltage vCBO 36 36 Vdc Em.

MRF581 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Nois.

MRF581 - RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSIST.

MRF5811LT1 - NPN Silicon High Frequency Transistor (Motorola)
.

MRF5812 - NPN Silicon RF Microwave Transistor (ASI)
MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.

MRF5812 - Bipolar Junction Transistor (Advanced Power Technology)
MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = .

MRF5812G - Bipolar Junction Transistor (Advanced Power Technology)
MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = .

MRF581A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish Features • Low Nois.

MRF581A - RF and Microwave Discrete Low Power Power Transistors (Advanced Power Technology)
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF581/MRF581A RF & MICROWAVE DISCRETE LOW POWER TRANSIST.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts