MRF901 transistor equivalent, npn silicon rf transistor.
* Low Noise Figure
* High Gain
* Common Emitter
MAXIMUM RATINGS
IC 30 mA
VCBO
25 V
VCEO
15 V
VEBO
2.0 V
PDISS
0.375 W @ TC = 75 °C
TJ -55 °C to +1.
up to 2.5 GHz.
FEATURES:
* Low Noise Figure
* High Gain
* Common Emitter
MAXIMUM RATINGS
IC 30 mA
VCBO
2.
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