MS2601 transistor equivalent, npn rf power transistor.
INCLUDE:
* Input/Output Matching
* Gold Metallization
* Emitter Ballasting
MAXIMUM RATINGS
IC VCC PDISS TJ TSTG θJC 0.45 A 34 V 11.5 W @ TC = 25 °C -65 °C to.
up to 3.1 GHz.
PACKAGE STYLE 400 x 400 2NL FLG
1
2 3
4
FEATURES INCLUDE:
* Input/Output Matching
* Gold Meta.
The ASI MS2601 is Common Base Device Designed for Pulsed S-Band Radar Amplifier Applications up to 3.1 GHz.
PACKAGE STYLE 400 x 400 2NL FLG
1
2 3
4
FEATURES INCLUDE:
* Input/Output Matching
* Gold Metallization
* Emitter Ballasting
.
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