Description
The Austin Semiconductor SRAM family employs high-speed, low power CMOS designs fabricated using doublelayer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications, ASI offers chip enable (CE) and output enable (OE) capability.
Features
- High Speed: 20, 25, 35, and 45 Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS double-metal process.
- Single +5V (+10%) Power Supply.
- Easy memory expansion with CE and OE options.
- All inputs and outputs are TTL compatible
A7 A8 A9 A12 A10 A11 A13 NC A14 A15 A16 A17 NC CE OE Vss
32-Pin Flat Pack (F)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A6 A.