ASC60N650MT3
Description
V X / Mob:15919711751 ASC60N650MT3 650V N-Channel MOSFET Silicon Carbide (SiC) MOSFET use a pletely new technology that provide superior switching performance and higher reliability pared to Silicon.
Key Features
- High Speed Switching with Low Capacitances
- High Blocking Voltage with Low RDS(on)
- Simple to drive with Standard Gate Drive
- 100% avalanche tested
- Maximum junction temperature of 150°C
Applications
- EV Charging
