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AT49F040T - 5-volt-only in-system Flash Memory

General Description

The AT49F040 is a 5-volt-only in-system Flash Memory.

Its 4 megabits of memory is organized as 524,288 words by 8 bits.

Key Features

  • Single Voltage Operation.
  • 5V Read.
  • 5V Reprogramming.
  • Fast Read Access Time - 70 ns.
  • Internal Program Control and Timer.
  • 16K bytes Boot Block With Lockout.
  • Fast Erase Cycle Time - 10 seconds.
  • Byte By Byte Programming - 50 µs/Byte.
  • Hardware Data Protection.
  • DATA Polling For End Of Program Detection.
  • Low Power Dissipation.
  • 50 mA Active Current.
  • 100 µA CMOS Standby Current.

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📁 Similar Datasheet

Part Number Description Manufacturer
AT49F040 5-volt-only in-system Flash Memory ATMEL Corporation
AT49F040B Flash Memory ATMEL Corporation
AT49F002NT 2-Megabit 5-volt Only Flash Memory ATMEL Corporation
AT49F002T 2-Megabit 5-volt Only CMOS Flash Memory ATMEL Corporation
AT49F1024 1-Megabit 5-volt Only Flash Memory ATMEL Corporation

Other Datasheets by Atmel (now Microchip Technology)

Part Number Description
AT49F040A 5-volt only in-system reprogrammable Flash memory
AT49F001 1-Megabit 5-volt Only Flash Memory
AT49F001A Flash Memory
AT49F001AN Flash Memory
AT49F001ANT Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 70 ns • Internal Program Control and Timer • 16K bytes Boot Block With Lockout • Fast Erase Cycle Time - 10 seconds • Byte By Byte Programming - 50 µs/Byte • Hardware Data Protection • DATA Polling For End Of Program Detection • Low Power Dissipation – 50 mA Active Current – 100 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F040 is a 5-volt-only in-system Flash Memory. Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 mW over the commercial temperature range.