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AT49F4096AT - 4-Megabit Flash Memory

This page provides the datasheet information for the AT49F4096AT, a member of the AT49F004T 4-Megabit Flash Memory family.

Datasheet Summary

Description

The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dissipation of just 275 mW.

Features

  • Single Voltage Operation.
  • 5V Read.
  • 5V Programming.
  • Fast Read Access Time - 55 ns.
  • Internal Erase/Program Control.
  • Sector Architecture.
  • One 8K Words (16K bytes) Boot Block with Programming Lockout.
  • Two 4K Words (8K bytes) Parameter Blocks.
  • One 240K Words (480K bytes) Main Memory Array Block.
  • Fast Sector Erase Time - 10 seconds.
  • Byte-by-Byte or Word-By-Word Programming - 10 µs Typical.
  • Hard.

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Datasheet preview – AT49F4096AT

Datasheet Details

Part number AT49F4096AT
Manufacturer ATMEL
File Size 251.08 KB
Description 4-Megabit Flash Memory
Datasheet download datasheet AT49F4096AT Datasheet
Additional preview pages of the AT49F4096AT datasheet.

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Full PDF Text Transcription

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Features • Single Voltage Operation – 5V Read – 5V Programming • Fast Read Access Time - 55 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (16K bytes) Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks – One 240K Words (480K bytes) Main Memory Array Block • Fast Sector Erase Time - 10 seconds • Byte-by-Byte or Word-By-Word Programming - 10 µs Typical • Hardware Data Protection • DATA Polling For End Of Program Detection • Low-Power Dissipation – 50 mA Active Current – 300 µA CMOS Standby Current • Typical 10,000 Write Cycles Description The AT49F004(T) and AT49F4096A(T) are 5-volt, 4-megabit Flash Memories organized as 524,288 words of 8 bits each or 256K words of 16 bits each.
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