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AT28C256 - 256K (32K x 8) Paged Parallel EEPROM

General Description

The AT28C256 is a high-performance electrically erasable and programmable readonly memory.

Its 256K of memory is organized as 32,768 words by 8 bits.

Key Features

  • Fast Read Access Time.
  • 150 ns.
  • Automatic Page Write Operation.
  • Internal Address and Data Latches for 64 Bytes.
  • Internal Control Timer.
  • Fast Write Cycle Times.
  • Page Write Cycle Time: 3 ms or 10 ms Maximum.
  • 1 to 64-byte Page Write Operation.
  • Low Power Dissipation.
  • 50 mA Active Current.
  • 200 µA CMOS Standby Current.
  • Hardware and Software Data Protection.
  • DATA Polling for End of Write.

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Full PDF Text Transcription for AT28C256 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AT28C256. For precise diagrams, and layout, please refer to the original PDF.

Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation – Internal Address and Data Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Ti...

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ta Latches for 64 Bytes – Internal Control Timer • Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum – 1 to 64-byte Page Write Operation • Low Power Dissipation – 50 mA Active Current – 200 µA CMOS Standby Current • Hardware and Software Data Protection • DATA Polling for End of Write Detection • High Reliability CMOS Technology – Endurance: 104 or 105 Cycles – Data Retention: 10 Years • Single 5V ± 10% Supply • CMOS and TTL Compatible Inputs and Outputs • JEDEC Approved Byte-wide Pinout • Full Military and Industrial Temperature Ranges • Green (Pb/Halide-free) Packaging Option 256K (32K x 8) Paged Para

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