AT29C256 Datasheet | Atmel

Features - - - - - - - - - - - - Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Page Program Operation Single Cycle Reprogram (Erase and Program) Internal Address and Data Latches for 64-Bytes Internal Program Control and Timer Hardware and Software Data Protection Fast Program Cycle Times Page (64-Byte) Program Time - 10 ms Chip Erase Time - 10 ms DATA Polling for End of Program Detection Low Power Dissipation 50 m A Active Current 300 µA CMOS Standby Current Typical Endurance > 10,000 Cycles Single 5V ± 10% Supply CMOS and TTL patible Inputs and Outputs mercial and Industrial Temperature Ranges 256K (32K x 8) 5-volt Only CMOS Flash Memory Description The AT29C256 is a 5-volt-only in-system Flash programmable and erasable read only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 275 m W. When the device is deselected, the CMOS standby current is less than 300 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. (continued) Pin Configurations Pin Name A0 - A14 CE OE WE I/O0 - I/O7 NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs No Connect Don’t Connect DIP Top View PLCC Top View TSOP Top View Type 1 Note: PLCC package pins 1 and 17 are DON’T CONNECT. 0046L 4-93 Description (Continued) To allow for simple in-system reprogrammability, the AT29C256 does not require high input voltages for programming. Five-volt-only mands determine the operation of the device. Reading data out of the device is similar to reading from a static RAM. Reprogramming the AT29C256 is performed on a page basis; 64-bytes of data are loaded into the device and then simultaneously programmed. The contents of the entire device may be erased by using a 6-byte software code (although erasure before...